Ellipsometric Study of SiOx Thin Films by Thermal Evaporation
نویسندگان
چکیده
منابع مشابه
Electronic state characterization of SiOx thin films prepared by evaporation
SiOx thin films with different stoichiometries from SiO1.3 to SiO1.8 have been prepared by evaporation of silicon monoxide in vacuum or under well-controlled partial pressures of oxygen sP,10−6 Torrd. These thin films have been characterized by x-ray photoemission and x-ray-absorption spectroscopies, this latter at the Si K and L2,3 absorption edges. It has been found that the films prepared in...
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ژورنال
عنوان ژورنال: Open Journal of Inorganic Chemistry
سال: 2016
ISSN: 2161-7406,2161-7414
DOI: 10.4236/ojic.2016.63013